HEAT TREATMENT APPARATUS, AND HEAT TREATMENT METHOD
To achieve both of an effective collection of a sublimate and reduction of influence on film thickness distribution.SOLUTION: A heat treatment apparatus comprises: a heating unit; a chamber; an exhaust unit; a partition unit; and a switching unit. The heating unit supports and heats a substrate on w...
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Zusammenfassung: | To achieve both of an effective collection of a sublimate and reduction of influence on film thickness distribution.SOLUTION: A heat treatment apparatus comprises: a heating unit; a chamber; an exhaust unit; a partition unit; and a switching unit. The heating unit supports and heats a substrate on which a film of a processing liquid is formed. The chamber is arranged in such a manner that it surrounds the substrate supported by the heating unit. The exhaust unit is configured to discharge a gas from an inner space of the chamber through a discharge opening located in the circumference of the heating unit. The partition unit is configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space. The switching unit is configured to switch between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged through the second space.SELECTED DRAWING: Figure 3
【課題】昇華物の効率的な回収と膜厚分布への影響の低減との両立を図る。【解決手段】熱処理装置は、加熱部と、チャンバと、排気部と、仕切り部と、切替部と、を備える。加熱部は、処理液の膜が形成された基板を支持して加熱する。チャンバは、加熱部に支持された基板を囲むように配置される。排気部は、加熱部の周囲に位置する排出口を介して、チャンバ内の空間からガスを排出する。仕切り部は、チャンバ内の空間を、加熱部上の基板が露出する第1空間と、第1空間の上方に位置する第2空間とに隔てる。切替部は、排気部により第1空間を介してガスが排出される第1状態と、排気部により第2空間を介してガスが排出される第2状態とを切り替える。【選択図】図3 |
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