VACUUM TREATMENT APPARATUS AND VACUUM TREATMENT METHOD

To provide a vacuum treatment apparatus that improves productivity, and to provide a vacuum treatment method.SOLUTION: A vacuum treatment apparatus includes a cylindrical sputtering target, a magnetic field generating mechanism, a control device and a vacuum vessel. The sputtering target includes: a...

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Bibliographische Detailangaben
Hauptverfasser: ONO TETSUHIRO, TACHIKAWA SHINSUKE, NISHINOBO YASUKI, SAITO KAZUHIKO, HAKOMORI MUNEHITO, TAKAGI DAI, SUDA TOMOKAZU, ORII YUICHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a vacuum treatment apparatus that improves productivity, and to provide a vacuum treatment method.SOLUTION: A vacuum treatment apparatus includes a cylindrical sputtering target, a magnetic field generating mechanism, a control device and a vacuum vessel. The sputtering target includes: a first principal surface for emitting sputtering particles; and a second principal surface located on an opposite side to the first principal surface. The magnetic field generating mechanism includes a plurality of magnetic circuit parts arranged in parallel in one axial direction while being opposite to the second principal surface and is configured to be capable of changing a position of a magnetic flux generated from a pair of magnetic circuit parts disposed at both ends in the one axial direction in the plurality of magnetic circuit parts. The control device controls the position of the magnetic flux to divert a discharged plasma, which is formed while being opposite to the first principal surface, to ends of the sputtering target. The vacuum vessel accommodates the sputtering target and the magnetic field generating mechanism.SELECTED DRAWING: Figure 1 【課題】生産性を向上させる真空処理装置及び真空処理方法を提供する。【解決手段】真空処理装置は、円筒状のスパッタリングターゲットと、磁場発生機構と、制御装置と、真空容器とを具備する。上記スパッタリングターゲットは、スパッタリング粒子を放出する第1主面と、上記第1主面とは反対側の第2主面とを含む。上記磁場発生機構は、上記第2主面に対向し、一軸方向に並設された複数の磁気回路部を有し、上記複数の磁気回路部の中、上記一軸方向において両端に配置された一対の磁気回路部から発せられる磁束の位置が変更可能に構成される。上記制御装置は、上記磁束の上記位置を制御し、上記第1主面に対向して形成される放電プラズマを上記スパッタリングターゲットの端部にまで逸らすことができる。上記真空容器は、上記スパッタリングターゲットと上記磁場発生機構とを収容する。【選択図】図1