SEMICONDUCTOR DEVICE

To obtain a semiconductor device with smaller mounting area and lower cost.SOLUTION: P-side switching elements SP1, SP2, SP3 and N-side switching elements SN1, SN2, SN3 connected to form a half bridge are driven by N-side drive circuits DCN1, DCN2, DCN3 and P-side drive circuits DCP1, DCP2, DCP3 res...

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Hauptverfasser: HANYU HIROSHI, YAMAMOTO AKIO
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YAMAMOTO AKIO
description To obtain a semiconductor device with smaller mounting area and lower cost.SOLUTION: P-side switching elements SP1, SP2, SP3 and N-side switching elements SN1, SN2, SN3 connected to form a half bridge are driven by N-side drive circuits DCN1, DCN2, DCN3 and P-side drive circuits DCP1, DCP2, DCP3 respectively. The N-side power generation circuit PGN1, PGN2, PGN3 generates the power supply voltage for the N-side drive circuit DCN1, DCN2, DCN3 from the power supply voltage of the P-side switching element SP1, SP2, SP3.SELECTED DRAWING: Figure 1 【課題】実装面積を小さくし、コストを低減することができる半導体装置を得る。【解決手段】ハーフブリッジを構成するように接続されたP側スイッチング素子SP1,SP2,SP3及びN側スイッチング素子SN1,SN2,SN3をN側駆動回路DCN1,DCN2,DCN3及びP側駆動回路DCP1,DCP2,DCP3がそれぞれ駆動する。N側電源生成回路PGN1,PGN2,PGN3がP側スイッチング素子SP1,SP2,SP3の電源電圧からN側駆動回路DCN1,DCN2,DCN3の電源電圧を生成する。【選択図】図1
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The N-side power generation circuit PGN1, PGN2, PGN3 generates the power supply voltage for the N-side drive circuit DCN1, DCN2, DCN3 from the power supply voltage of the P-side switching element SP1, SP2, SP3.SELECTED DRAWING: Figure 1 【課題】実装面積を小さくし、コストを低減することができる半導体装置を得る。【解決手段】ハーフブリッジを構成するように接続されたP側スイッチング素子SP1,SP2,SP3及びN側スイッチング素子SN1,SN2,SN3をN側駆動回路DCN1,DCN2,DCN3及びP側駆動回路DCP1,DCP2,DCP3がそれぞれ駆動する。N側電源生成回路PGN1,PGN2,PGN3がP側スイッチング素子SP1,SP2,SP3の電源電圧からN側駆動回路DCN1,DCN2,DCN3の電源電圧を生成する。【選択図】図1</description><language>eng ; jpn</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRONIC CIRCUITRY ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRICITY ; GENERATION ; PULSE TECHNIQUE</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230518&amp;DB=EPODOC&amp;CC=JP&amp;NR=2023068926A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230518&amp;DB=EPODOC&amp;CC=JP&amp;NR=2023068926A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HANYU HIROSHI</creatorcontrib><creatorcontrib>YAMAMOTO AKIO</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>To obtain a semiconductor device with smaller mounting area and lower cost.SOLUTION: P-side switching elements SP1, SP2, SP3 and N-side switching elements SN1, SN2, SN3 connected to form a half bridge are driven by N-side drive circuits DCN1, DCN2, DCN3 and P-side drive circuits DCP1, DCP2, DCP3 respectively. 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subjects APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRONIC CIRCUITRY
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRICITY
GENERATION
PULSE TECHNIQUE
title SEMICONDUCTOR DEVICE
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