SEMICONDUCTOR DEVICE
To obtain a semiconductor device with smaller mounting area and lower cost.SOLUTION: P-side switching elements SP1, SP2, SP3 and N-side switching elements SN1, SN2, SN3 connected to form a half bridge are driven by N-side drive circuits DCN1, DCN2, DCN3 and P-side drive circuits DCP1, DCP2, DCP3 res...
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Zusammenfassung: | To obtain a semiconductor device with smaller mounting area and lower cost.SOLUTION: P-side switching elements SP1, SP2, SP3 and N-side switching elements SN1, SN2, SN3 connected to form a half bridge are driven by N-side drive circuits DCN1, DCN2, DCN3 and P-side drive circuits DCP1, DCP2, DCP3 respectively. The N-side power generation circuit PGN1, PGN2, PGN3 generates the power supply voltage for the N-side drive circuit DCN1, DCN2, DCN3 from the power supply voltage of the P-side switching element SP1, SP2, SP3.SELECTED DRAWING: Figure 1
【課題】実装面積を小さくし、コストを低減することができる半導体装置を得る。【解決手段】ハーフブリッジを構成するように接続されたP側スイッチング素子SP1,SP2,SP3及びN側スイッチング素子SN1,SN2,SN3をN側駆動回路DCN1,DCN2,DCN3及びP側駆動回路DCP1,DCP2,DCP3がそれぞれ駆動する。N側電源生成回路PGN1,PGN2,PGN3がP側スイッチング素子SP1,SP2,SP3の電源電圧からN側駆動回路DCN1,DCN2,DCN3の電源電圧を生成する。【選択図】図1 |
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