PHOTO-CROSSLINKABLE POLYMER, INSULATION FILM, AND ORGANIC ELECTRIC FIELD EFFECT TRANSISTOR DEVICE INCLUDING THE SAME

To provide a resin which enables manufacture of an organic electric field effect transistor device element having excellent bias stress resistance by using as a gate insulation film layer of an organic electric field effect transistor device.SOLUTION: A resin includes a repeating unit represented by...

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Bibliographische Detailangaben
Hauptverfasser:	OKU SHINYA, FUKUDA TAKASHI, SHIWAKU REI, IIJIMA YUTA, YUMINO SHOHEI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	To provide a resin which enables manufacture of an organic electric field effect transistor device element having excellent bias stress resistance by using as a gate insulation film layer of an organic electric field effect transistor device.SOLUTION: A resin includes a repeating unit represented by the following formula, wherein a HOMO level that the repeating unit represented by the following formula has is -6.4 eV or less.SELECTED DRAWING: None 【課題】有機電界効果トランジスタデバイスのゲ－ト絶縁膜層として用いることで、優れたバイアスストレス耐性を有する有機電界効果トランジスタデバイス素子を作製可能な樹脂を提供する。【解決手段】下式で表される反復単位を含む樹脂であって、下式で表される反復単位が有するＨＯＭＯ準位が－６．４ｅＶ以下である。JPEG2023064968000054.jpg3946【選択図】なし