SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

To provide a semiconductor device in which a connection portion of a bonding wire is hardly peeled off, and a manufacturing method thereof.SOLUTION: A first conductive layer CL1 is connected to an impurity region that is to be a source region SR or an emitter region ER. The first conductive layer CL...

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Bibliographische Detailangaben
1. Verfasser:	TONEGAWA TAKESHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	To provide a semiconductor device in which a connection portion of a bonding wire is hardly peeled off, and a manufacturing method thereof.SOLUTION: A first conductive layer CL1 is connected to an impurity region that is to be a source region SR or an emitter region ER. The first conductive layer CL1 having an emitter pad EP is separated from a second conductive layer CL2 having a Kelvin emitter pad KP and a relay pad RP. A plane occupation area of the Kelvin emitter pad KP is smaller than a plane occupation area of the emitter pad EP.SELECTED DRAWING: Figure 2 【課題】ボンディングワイヤの接続部分が剥がれ難い半導体装置およびその製造方法を提供する。【解決手段】第１導電層ＣＬ１は、ソース領域ＳＲまたはエミッタ領域ＥＲとなる不純物領域に接続されている。エミッタパッドＥＰを有する第１導電層ＣＬ１と、ケルビンエミッタパッドＫＰおよび中継パッドＲＰを有する第２導電層ＣＬ２とが分離している。ケルビンエミッタパッドＫＰの平面占有面積はエミッタパッドＥＰの平面占有面積よりも小さい。【選択図】図２