FAILURE DETECTION METHOD AND PLASMA PROCESSING APPARATUS

To detect a failure of an impedance adjustment unit.SOLUTION: In a plasma processing apparatus that has a processing container partitioned into an antenna room and a processing room, and comprises: a metal window having a plurality of partial windows; an antenna generating inductive coupling plasma; an electrostatic chuck holding a substrate; and a bottom electrode supporting the electrostatic chuck, a failure detection method of an impedance adjustment unit between a plurality of partial windows including a plurality of capacitive elements existing between the plurality of partial windows and earth, and earth comprises the steps of: applying direct-current voltage to an attraction electrode of the electrostatic chuck; starting supply of source high-frequency power and/or bias high-frequency power; constantly supplying source high-frequency power and bias high-frequency power; measuring capacitive element voltage that is applied to each of the plurality of capacitive elements during performing processing of the substrate; and determining failures of a plurality of impedance adjustment units on the basis of a comparison result between the capacitive element voltage of the plurality of capacitive elements and the predetermined threshold value.SELECTED DRAWING: Figure 5 【課題】インピーダンス調整部の故障を検知する。【解決手段】処理容器内をアンテナ室と処理室に区画し、複数の部分窓を有する金属窓と、誘導結合プラズマを生成するアンテナと、基板を保持する静電チャックと、静電チャックを支持する下部電極を有するプラズマ処理装置にて、複数の部分窓と接地との間にある複数の容量素子を含む複数の部分窓と接地との間のインピーダンス調整部の故障検知方法であって、静電チャックの吸着電極に直流電圧を印加する工程、ソース用高周波電力及び／又はバイアス用高周波電力の供給を開始する工程、ソース用高周波電力及びバイアス用高周波電力を定常供給する工程、基板に処理を行う間複数の容量素子のそれぞれにかかる容量素子電圧を測定する工程、複数の容量素子の容量素子電圧と予め定められた閾値との比較結果に基づき複数のインピーダンス調整部の故障を判定する工程を含む方法。【選択図】図５