SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device capable of being suitably manufactured.SOLUTION: A semiconductor storage device comprises: a substrate including a first region and a second region; a plurality of first conductive layers arranged in a direction crossing a surface of the substrate; a first semiconductor layer provided in the first region and facing the plurality of first conductive layers; a charge storage layer provided between the plurality of first conductive layers and the first semiconductor layer; a contact electrode provided in the second region and connected to one of the plurality of first conductive layers; and a plurality of first structures and a plurality of second structures provided in the second region, the outer peripheral surfaces of the plurality of first structures and the plurality of second structures being surrounded by the plurality of first conductive layers. The first structure includes a second semiconductor layer facing the plurality of first conductive layers and including a semiconductor material common to the first semiconductor layer, and a first insulation layer provided between the plurality of first conductive layers and the second conductive layer and including an insulation material common to the charge storage layer. The second structure does not include the semiconductor material and the insulation material.SELECTED DRAWING: Figure 2 【課題】好適に製造可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、第１領域及び第２領域を備える基板と、基板の表面と交差する方向に並ぶ複数の第１導電層と、第１領域に設けられ複数の第１導電層と対向する第１半導体層と、複数の第１導電層及び第１半導体層の間に設けられた電荷蓄積層と、第２領域に設けられ複数の第１導電層のうちの一つに接続されたコンタクト電極と、第２領域に設けられ複数の第１導電層によって外周面が囲われた複数の第１構造及び複数の第２構造と、を備える。第１構造は、複数の第１導電層に対向し第１半導体層と共通の半導体材料を含む第２半導体層と、複数の第１導電層及び第２半導体層の間に設けられ電荷蓄積層と共通の絶縁材料を含む第１絶縁層とを含む。第２構造は、上記半導体材料及び上記絶縁材料を含まない。【選択図】図２