SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

To provide a semiconductor storage device with a simplified manufacturing process.SOLUTION: A semiconductor storage device of an embodiment includes a first chip 40 and a second chip 50. The first chip includes a plurality of first conductive layers having intervals and arranged in a first direction; a first semiconductor layer extending in the plurality of first conductive layers in the first direction; a first insulation film between the first semiconductor layer and the plurality of first conductive layers; a second semiconductor layer 41 provided above the plurality of first conductive layers and in contact with the first semiconductor layer; and a first electrode PD3a provided above and in contact with the second semiconductor layer. The second chip includes a second electrode PD4 in contact with the first electrode, and a second conductive layer 51 in contact with the second electrode.SELECTED DRAWING: Figure 3 【課題】製造工程が簡素化された半導体記憶装置を提供する。【解決手段】実施形態の半導体記憶装置は、間隔を有して第１方向に並ぶ複数の第１導電層と、前記複数の第１導電層内を前記第１方向に延びる第１半導体層と、前記第１半導体層と前記複数の第１導電層との間の第１絶縁膜と、前記複数の第１導電層の上方に設けられ、前記第１半導体層に接する第２半導体層４１と、前記第２半導体層の上方に接して設けられた第１電極ＰＤ３ａとを含む第１チップ４０を含み、前記第１電極に接する第２電極ＰＤ４と、前記第２電極に接する第２導電層５１とを含む第２チップ５０を含む。【選択図】図３