SEMICONDUCTOR STORAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE
To provide a semiconductor storage that can improve electrical characteristics, and a method for manufacturing the semiconductor storage.SOLUTION: A semiconductor storage of an embodiment comprises a laminate and a columnar body. The columnar body includes an insulating core, a channel layer, and a...
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Zusammenfassung: | To provide a semiconductor storage that can improve electrical characteristics, and a method for manufacturing the semiconductor storage.SOLUTION: A semiconductor storage of an embodiment comprises a laminate and a columnar body. The columnar body includes an insulating core, a channel layer, and a memory film. A plurality of conductive layers included in the laminate include a plurality of first conductive layers, and one or more second conductive layers located above the plurality of first conductive layers. The channel layer includes a first portion located between the plurality of first conductive layers and the insulating core, and a second portion having a film thickness larger by 5 nm or more than or twice or more the film thickness of the first portion. The second portion extends downward beyond an upper end of the insulating core in a first direction, and extends downward beyond a top face of the uppermost second conductive layer of the one or more second conductive layers.SELECTED DRAWING: Figure 4
【課題】電気的特性の向上を図ることができる半導体記憶装置、および半導体記憶装置の製造方法を提供することである。【解決手段】実施形態の半導体記憶装置は、積層体と、柱状体とを備える。前記柱状体は、絶縁コアと、チャネル層と、メモリ膜とを含む。前記積層体に含まれる複数の導電層は、複数の第1導電層と、前記複数の第1導電層の上方に位置した1つ以上の第2導電層とを含む。前記チャネル層は、前記複数の第1導電層と前記絶縁コアとの間に位置した第1部分と、前記第1部分の膜厚に比べて5nm以上大きい、あるいは、2倍以上の膜厚を持つ第2部分とを含む。前記第2部分は、前記第1方向で、前記絶縁コアの上端よりも下方まで延びているとともに、前記1つ以上の第2導電層のなかの最上の第2導電層についての上面よりも下方まで延びている。【選択図】図4 |
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