METHOD FOR MANUFACTURING NEGATIVE ELECTRODE ACTIVE MATERIAL

To provide a negative electrode active material containing silicon clathrate II and having sufficient pore volume.SOLUTION: A method for manufacturing negative electrode active material includes an alloying step of reacting a Na source and a Si source to produce a Na-Si alloy containing Na and Si, a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YAMAGUCHI YASUHIRO, URABE KOTA, EGUCHI TATSUYA, NIIMURA KAZUHIRO, YOSHIDA ATSUSHI, HARADA MASANORI, OTAKI MITSUTOSHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide a negative electrode active material containing silicon clathrate II and having sufficient pore volume.SOLUTION: A method for manufacturing negative electrode active material includes an alloying step of reacting a Na source and a Si source to produce a Na-Si alloy containing Na and Si, and a silicon clathrate forming step of heating the Na-Si alloy to reduce the amount of Na in the Na-Si alloy to form silicon clathrate II, a porous Si having a BET specific surface area of 20 m2/g or more is used as the Si source.SELECTED DRAWING: None 【課題】シリコンクラスレートＩＩを含有し十分な空孔体積を有する負極活物質を提供すること。【解決手段】Ｎａ源およびＳｉ源を反応させてＮａ及びＳｉを含有するＮａ－Ｓｉ合金を製造する合金化工程と、前記Ｎａ－Ｓｉ合金を加熱して、前記Ｎａ－Ｓｉ合金におけるＮａ量を減少させシリコンクラスレートＩＩを生成するシリコンクラスレート生成工程と、を具備し、前記Ｓｉ源として、ＢＥＴ比表面積が２０ｍ２／ｇ以上のポーラスＳｉを用いる、負極活物質の製造方法。【選択図】なし