SEMICONDUCTOR DEVICE

To provide a semiconductor device capable of switching at high speed.SOLUTION: A semiconductor device comprises: a first electrode; a first semiconductor layer provided on the first electrode; a columnar first insulation film extending below from an upper surface of the first semiconductor layer; a columnar second electrode provided in the first insulation film and extending in a vertical direction; a second semiconductor layer partly provided in an upper layer part of the first semiconductor layer and adjacent to the first insulation film via the first semiconductor layer; a third semiconductor layer partly provided in an upper layer part of the second semiconductor layer; a third electrode provided above an upper surface of the first semiconductor layer and overlapping a part of the first insulation film, the first semiconductor layer, and the second semiconductor layer when viewed from above; a fourth electrode provided above an upper end of the third electrode; and a second insulation film provided between the third electrode, the fourth electrode, the first semiconductor layer, and the second semiconductor layer.SELECTED DRAWING: Figure 2 【課題】高速スイッチングが可能な半導体装置を提供する。【解決手段】半導体装置は、第１電極と、前記第１電極上に設けられる第１半導体層と、前記第１半導体層の上面から下方に延びる柱状の第１絶縁膜と、前記第１絶縁膜中に設けられ、上下方向に延びる柱状の第２電極と、前記第１半導体層の上層部に部分的に設けられ、前記第１半導体層を介して前記第１絶縁膜と隣り合う第２半導体層と、前記第２半導体層の上層部に部分的に設けられる第３半導体層と、前記第１半導体層の上面よりも上方に設けられ、上方から見て、前記第１絶縁膜、前記第１半導体層、および前記第２半導体層の一部と重なる第３電極と、前記第３電極の上端よりも上方に設けられる第４電極と、前記第３電極と、前記第４電極、前記第１半導体層、および前記第２半導体層と、の間に設けられる第２絶縁膜と、を備える。【選択図】図２