METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM
To provide a technology that reduces the influence of plasma directivity and enables isotropic etching.SOLUTION: A method for manufacturing a semiconductor device has a modification process in which a modification gas is supplied to modify a deposited film on a substrate on which no pattern is provi...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a technology that reduces the influence of plasma directivity and enables isotropic etching.SOLUTION: A method for manufacturing a semiconductor device has a modification process in which a modification gas is supplied to modify a deposited film on a substrate on which no pattern is provided to form a modified film, and a modified film removal process that includes timing in which a removal gas activated by plasma and a protective film forming gas are supplied at least simultaneously to remove the modified film.SELECTED DRAWING: Figure 4
【課題】プラズマ指向性の影響を少なくし、等方性エッチングを実現可能な技術を提供する技術を提供する。【解決手段】半導体装置の製造方法は、改質ガスを供給して、パターンが設けられていない基板上の堆積膜を改質させ改質膜を形成する改質工程と、プラズマによって活性化した除去ガスと、保護膜形成ガスと、を少なくとも同時に供給するタイミングを含んで改質膜を除去させる改質膜除去工程と、を有する。【選択図】図４ |
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