PHOTODETECTOR, PHOTODETECTION SYSTEM, LIDAR DEVICE, AND MOBILE BODY

To provide a photodetector, a photodetection system, a LIDAR device, and a mobile body that are capable of improving photodetection efficiency.SOLUTION: A photodetector comprises a first semiconductor layer of a first conduction type, an element region, a first insulation unit, a quench unit, and a first lens. The element region includes a first semiconductor region of the first conduction type, a second semiconductor region of the first conduction type, and a third semiconductor region of a second conduction type. The third semiconductor region forms a pn junction surface together with the second semiconductor region. A plurality of element regions are provided in a first direction in parallel with pn junction surfaces. The first insulation unit has tilted surfaces tilted with respect to a second direction perpendicular to the pn junction surfaces and is positioned between third semiconductor regions adjacent to each other in the first direction. The quench unit is electrically connected to a third semiconductor region. The first lens is provided above the plurality of element regions and the first insulation unit. The center in the first direction of the first lens is positioned directly over the first insulation unit.SELECTED DRAWING: Figure 1 【課題】本発明の実施形態は、光検出効率を向上可能な、光検出器、光検出システム、ライダー装置、及び移動体を提供する。【解決手段】実施形態に係る光検出器は、第１導電形の第１半導体層と、素子領域と、第１絶縁部と、クエンチ部と、第１レンズと、を備える。素子領域は、第１導電形の第１半導体領域と、第１導電形の第２半導体領域と、第２導電形の第３半導体領域と、を含む。第３半導体領域は、第２半導体領域とｐｎ接合面を形成する。素子領域は、ｐｎ接合面に平行な第１方向において複数設けられる。第１絶縁部は、ｐｎ接合面に垂直な第２方向に対して傾斜した傾斜面を有し、第１方向で隣り合う第３半導体領域同士の間に位置する。クエンチ部は、第３半導体領域と電気的に接続される。第１レンズは、複数の素子領域及び第１絶縁部よりも上方に設けられる。第１レンズの第１方向における中心は、第１絶縁部の直上に位置する。【選択図】図１