METHOD AND DEVICE FOR MANUFACTURING CRYSTALS

To provide a method for manufacturing crystals that can effectively melt a semiconductor by effectively transferring heat to a semiconductor formed on a substrate.SOLUTION: The method for manufacturing crystals is used to manufacture crystals of a semiconductor 3. The method includes the steps of: f...

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Bibliographische Detailangaben
Hauptverfasser: WATABE HEIJI, HOSOI TAKUJI, SHIMURA TAKAYOSHI, KUNIYOSHI MIZUKI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a method for manufacturing crystals that can effectively melt a semiconductor by effectively transferring heat to a semiconductor formed on a substrate.SOLUTION: The method for manufacturing crystals is used to manufacture crystals of a semiconductor 3. The method includes the steps of: forming the semiconductor 3 on a substrate 1; forming a cap layer 5 covering the surface of the semiconductor 3; forming an electromagnetic wave absorption layer 7 which absorbs an electromagnetic wave LT, on the cap layer 5; and raising the temperature of the electromagnetic wave absorption layer 7 by irradiating the electromagnetic wave absorption layer 7 with the electromagnetic wave LT.SELECTED DRAWING: Figure 5 【課題】基板上に形成された半導体に効果的に熱を伝達して、半導体を効果的に溶融することの可能な結晶作製方法を提供する。【解決手段】結晶作製方法において、半導体3の結晶を作製する。結晶作製方法は、基板1上に半導体3を形成する工程と、半導体3の表面を覆うキャップ層5を形成する工程と、キャップ層5上に、電磁波LTを吸収する電磁波吸収層7を形成する工程と、電磁波吸収層7に電磁波LTを照射して、電磁波吸収層7の温度を上昇させる工程とを含む。【選択図】図5