SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME

To provide a sputtering target that suppresses generation of arcing and increases product yield, and to provide a method for manufacturing the same.SOLUTION: A sputtering target includes a surface shape that satisfies (a) a minimum self-correlation length Sal of 3 μm or more and 30 μm or less in at...

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Bibliographische Detailangaben
Hauptverfasser:	AONO MASAHIRO, NAGASHIMA TAKUYA, YAGI SHOHEI, TADOKORO JUN, EGUCHI TOYOKAZU, KAMADA TOMONARI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a sputtering target that suppresses generation of arcing and increases product yield, and to provide a method for manufacturing the same.SOLUTION: A sputtering target includes a surface shape that satisfies (a) a minimum self-correlation length Sal of 3 μm or more and 30 μm or less in at least a non-sputter region when being observed through a laser microscope of 400 magnifications.SELECTED DRAWING: None 【課題】アーキングの発生を抑制し、製品歩留まりを向上させるスパッタリングターゲット及びその製造方法を提供する。【解決手段】倍率４００のレーザー顕微鏡で観察した場合に、少なくとも非スパッタ領域に、（ａ）最小自己相関長さSalが３μｍ以上３０μｍ以下を満たす表面形状を有することを特徴とするスパッタリングターゲット。【選択図】なし