SEMICONDUCTOR LIGHT-EMITTING ELEMENT, EXPOSURE DEVICE, IMAGE FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

To provide a semiconductor light-emitting element that can efficiently extract light to the outside.SOLUTION: A semiconductor light-emitting element (1) comprises: an electrode of a first conductivity type (18); and a semiconductor lamination part of a second conductivity type (10) that has a first surface in contact with the electrode (18). The semiconductor lamination part (10) has a first semiconductor layer (10a) and a light-emitting layer (14) that is in contact with the first semiconductor layer (10a). The semiconductor lamination part (10) is formed with impurity diffusion areas (17a, 17b) that reach the light-emitting layer (14) from a first surface (10b) through a first semiconductor layer (10a) and in which impurities of the first conductivity type are dispersed. The electrode (18) is arranged in an area not overlapping light-emitting areas (17a1, 17b1) formed through joining of the light-emitting layer (14) and the impurity diffusion areas (17a, 17b) in the lamination direction of the first semiconductor layer (10a) and the light-emitting layer (14).SELECTED DRAWING: Figure 2 【課題】光を効率的に外部に取り出すことができる半導体発光素子を提供する。【解決手段】半導体発光素子（１）は、第１導電型の電極（１８）と、電極（１８）と接する第１の面を有する第２導電型の半導体積層部（１０）とを備え、半導体積層部（１０）は、第１の半導体層（１０ａ）と、第１の半導体層（１０ａ）に接する発光層（１４）とを有し、半導体積層部（１０）には、第１の面（１０ｂ）から第１の半導体層（１０ａ）を介して発光層（１４）内に達し、第１導電型の不純物が拡散されている不純物拡散領域（１７ａ、１７ｂ）が形成されており、電極（１８）は、第１の半導体層（１０ａ）と発光層（１４）との積層方向において、発光層（１４）と不純物拡散領域（１７ａ、１７ｂ）との接合によって形成された発光領域（１７ａ１、１７ｂ１）と重ならない領域に配置されている。【選択図】図２