SEMICONDUCTOR MODULE

To obtain a compact and inexpensive semiconductor module that suppresses an increase in on-resistance and an increase in turn-off surge voltage at low temperatures.SOLUTION: A semiconductor module includes: a semiconductor switching element; and a stress-applying portion that is provided on one or both of a first surface and a second surface opposite to the first surface of the semiconductor switching element, has a linear expansion coefficient larger than the linear expansion coefficient of a main material of the semiconductor switching element, and has a thickness larger than that of the semiconductor switching element. The stress-applying portion generates compressive stress or tensile stress in the semiconductor switching element due to thermal contraction or thermal expansion of the stress-applying portion due to temperature change. The semiconductor switching element lowers a threshold voltage at which the semiconductor switching element turns on as the magnitude of compressive stress or tensile stress increases.SELECTED DRAWING: Figure 2 【課題】低温でのオン抵抗の増大及びターンオフサージ電圧の増大を抑制した、小型で安価な半導体モジュールを得ること。【解決手段】半導体スイッチング素子と、半導体スイッチング素子の第一面及び第一面とは反対側の第二面の一方または双方に設けられ、半導体スイッチング素子の主たる材料の線膨張係数よりも大きい線膨張係数を有し、厚みが半導体スイッチング素子よりも厚い応力印加部と、を備え、応力印加部は、温度変化に伴った応力印加部の熱収縮または熱膨張により、半導体スイッチング素子に圧縮応力または引張応力を生じさせ、半導体スイッチング素子は、圧縮応力又は引張応力の大きさが増加するに従って、半導体スイッチング素子がオンになる閾値電圧が低下する。【選択図】図２