SEMICONDUCTOR DEVICE

To provide a semiconductor device that combine power supply stabilization with improved heat dissipation performance.SOLUTION: The semiconductor device has a substrate and a semiconductor chip disposed on the substrate, the substrate has a groove opening on the semiconductor chip side, a wiring sect...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUGAYA SHINJI, OBA TAKAYUKI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
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Beschreibung
Zusammenfassung:To provide a semiconductor device that combine power supply stabilization with improved heat dissipation performance.SOLUTION: The semiconductor device has a substrate and a semiconductor chip disposed on the substrate, the substrate has a groove opening on the semiconductor chip side, a wiring section of a predetermined pattern is provided inside the groove via an insulating layer, the substrate is connected to the ground wiring of the semiconductor chip, the wiring section is connected to the power wiring of the semiconductor chip, and the wiring section is not exposed from the rear side of the substrate.SELECTED DRAWING: Figure 1 【課題】電源安定化と放熱性能の向上とを両立した半導体装置の提供。【解決手段】本半導体装置は、基板と、前記基板上に配置された半導体チップと、を有し、前記基板は、前記半導体チップ側に開口する溝を備え、前記溝の内側に、絶縁層を介して所定パターンの配線部が設けられ、前記基板は前記半導体チップのグランド配線に接続され、前記配線部は前記半導体チップの電源配線に接続され、前記配線部は、前記基板の背面から露出していない。【選択図】図1