IMAGE SENSOR INCLUDING PIXEL ISOLATION STRUCTURE INCLUDING DOUBLE TRENCH

To provide an image sensor capable of improving dark level characteristics.SOLUTION: An image sensor includes a semiconductor substrate having a first surface and a second surface facing the first surface and including a plurality of pixels, a first pixel isolation structure including a first trench extending into the semiconductor substrate from a first side of the semiconductor substrate and a conductive layer disposed within the first trench, and a second pixel isolation structure including second and third trenches extending from a second side of the semiconductor substrate into the semiconductor substrate, respectively, and a dielectric layer disposed within the second and third trenches, and the first pixel isolation structure and the second pixel isolation structure are in contact with each other to define pixels in the semiconductor substrate.SELECTED DRAWING: Figure 2 【課題】 ダークレベル特性を改善し得るイメージセンサを提供する。【解決手段】 第１面及び第１面に対向する第２面を有し、複数のピクセルを含む半導体基板と、半導体基板の第１面から半導体基板内部に延びる第１トレンチ、及び第１トレンチ内部に配置される導電層を含む第１ピクセル分離構造物と、半導体基板の第２面から半導体基板内部にそれぞれ延びる第２トレンチ及び第３トレンチ、及び第２トレンチ及び第３トレンチ内部に配置される誘電層を含む第２ピクセル分離構造物とを含み、第１ピクセル分離構造物及び第２ピクセル分離構造物は、互いに接触することで、半導体基板内にピクセルを定義するイメージセンサである。【選択図】図２