SEMICONDUCTOR LIGHT RECEIVING ELEMENT, AND METHOD OF MANUFACTURING THE SAME

To provide a semiconductor light receiving element and a method of manufacturing the same capable of suppressing increase in dark current.SOLUTION: A semiconductor light receiving element comprises: a first semiconductor layer of a first conductivity type provided on a substrate; a light absorption layer provided on the first semiconductor layer; a second semiconductor layer of the first conductivity type provided on the light absorption layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the third semiconductor layer; a third electrode; and an insulating film. The second and third semiconductor layers form a mesa protruded above an upper surface of the second semiconductor layer. The insulating film covers the upper surface of the second semiconductor layer. The third electrode is provided on a surface on the insulating film and on the second semiconductor layer.SELECTED DRAWING: Figure 1B 【課題】暗電流の増加を抑制することが可能な半導体受光素子およびその製造方法を提供する。【解決手段】基板の上に設けられ、第１の導電型を有する第１半導体層と、前記第１半導体層の上に設けられた光吸収層と、前記光吸収層の上に設けられ、前記第１の導電型を有する第２半導体層と、前記第２半導体層の上に設けられ、第２の導電型を有する第３半導体層と、前記第１半導体層と電気的に接続された第１電極と、前記第３半導体層と電気的に接続された第２電極と、第３電極と、絶縁膜と、を具備し、前記第２半導体層および前記第３半導体層は、前記第２半導体層の上面よりも上側に突出するメサを形成し、前記絶縁膜は、前記第２半導体層の上面を覆い、前記第３電極は、前記絶縁膜の表面上であって、前記第２半導体層の上に設けられている半導体受光素子。【選択図】 図１Ｂ