STORAGE DEVICE

To provide a storage device having high reliability.SOLUTION: A storage device according to an embodiment includes: a first wiring extending in a first direction; a second wiring extending in a second direction; a memory cell that is connected between the first wiring and the second wiring, includes a resistance change memory element having a first resistance state and a second resistance state having a higher resistance than the first resistance state and a two-terminal switching element connected in series to the resistance change memory element, and stores data based on the resistance state set in the resistance change memory element; and a voltage application circuit that applies to the memory cell a write voltage signal that has a first polarity and turns on the two-terminal switching element to set a desired resistance state in the resistance change memory element and after applying the write voltage signal to the memory cell, applies to the memory cell a second polarity voltage signal having a second polarity opposite to the first polarity and having a magnitude such that the two-terminal switching element is not turned on.SELECTED DRAWING: Figure 11 【課題】 高い信頼性を有する記憶装置を提供する。【解決手段】 実施形態に係る記憶装置は、第１の方向に延伸する第１の配線と、第２の方向に延伸する第２の配線と、第１の配線と第２の配線との間に接続されたメモリセルであって、第１の抵抗状態及び第１の抵抗状態よりも高い抵抗を有する第２の抵抗状態を有する抵抗変化記憶素子と、抵抗変化記憶素子に対して直列に接続された２端子スイッチング素子とを含み、抵抗変化記憶素子に設定されている抵抗状態に基づくデータを記憶するメモリセルと、第１極性を有し且つ２端子スイッチング素子をオン状態にして抵抗変化記憶素子に所望の抵抗状態を設定する書き込み電圧信号をメモリセルに印加し、メモリセルに書き込み電圧信号を印加した後に、第１極性と逆の第２極性を有し且つ２端子スイッチング素子がオン状態にならない大きさを有する第２極性電圧信号をメモリセルに印加する電圧印加回路とを備える。【選択図】図１１