DRAWING-UP APPARATUS OF SINGLE CRYSTAL

To provide a drawing-up apparatus of a single crystal capable of preventing splashing droplets deposited on a heat shield member from falling onto the surface of raw material melt.SOLUTION: A drawing-up apparatus of a single crystal by Chokralsky method is equipped with a heat shield member opposite...

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Bibliographische Detailangaben
Hauptverfasser:	KOBAYASHI TAKUO, SATO WATARU, SATO YOHEI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a drawing-up apparatus of a single crystal capable of preventing splashing droplets deposited on a heat shield member from falling onto the surface of raw material melt.SOLUTION: A drawing-up apparatus of a single crystal by Chokralsky method is equipped with a heat shield member opposite to the surface of raw material melt. The heat shield member has a concave bottom edge face opposite to the surface of raw material melt. The concave bottom edge face has a surface area of 120% or more relative to the surface area of the flat bottom edge face where the concave part is not formed.SELECTED DRAWING: Figure 5 【課題】簡便な方法で、熱遮蔽部材に飛散して付着した湯飛びが原料融液表面に落下するのを防止することが可能な単結晶引上げ装置を提供すること。【解決手段】チョクラルスキー法による単結晶引上げ装置であって、原料融液表面に対向する熱遮蔽部材を有し、該熱遮蔽部材の前記原料融液表面に対向する下端面は凹部を有し、前記下端面の表面積は、前記凹部が形成されていない平坦な前記下端面の表面積を基準として、１２０％以上のものであることを特徴とする単結晶引上げ装置。【選択図】図５