SEMICONDUCTOR DEVICE
To provide a semiconductor device capable of reducing leakage current while reducing switching loss.SOLUTION: The semiconductor device includes: an IGBT region 11 having an IGBT element; and an FWD region 12 having an FWD element, which are formed on a common semiconductor substrate 30. A barrier re...
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| creator | SUMITOMO MASAKIYO TAKAHASHI SHIGEKI |
| description | To provide a semiconductor device capable of reducing leakage current while reducing switching loss.SOLUTION: The semiconductor device includes: an IGBT region 11 having an IGBT element; and an FWD region 12 having an FWD element, which are formed on a common semiconductor substrate 30. A barrier region 36 and a first base layer 32a has the peak concentration at a predetermined position of the semiconductor substrate 30 in the thickness direction. Defining the peak concentration of the barrier region 36 as y[×1.0×1016/cm3], and the peak concentration of the first base layer 32a as x[×10×1017/cm3], the semiconductor device has the configuration that satisfies y≤1.0429x2-2.4371x+1.48.SELECTED DRAWING: Figure 5
【課題】スイッチング損失を低減しつつ、リーク電流も低減できる半導体装置を提供する。【解決手段】ＩＧＢＴ素子を有するＩＧＢＴ領域１１と、ＦＷＤ素子を有するＦＷＤ領域１２とが共通の半導体基板３０に形成されている半導体装置において、バリア領域３６および第１ベース層３２ａは、半導体基板３０の厚さ方向の所定位置にピーク濃度を有し、バリア領域３６のピーク濃度をｙ［×１．０×１０１６／ｃｍ３］とし、第１ベース層３２ａのピーク濃度をｘ［×１０×１０１７／ｃｍ３］とすると、ｙ≦１．０４２９ｘ２－２．４３７１ｘ＋１．４８を満たす構成となるようにする。【選択図】図５ |
| format | Patent |
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【課題】スイッチング損失を低減しつつ、リーク電流も低減できる半導体装置を提供する。【解決手段】ＩＧＢＴ素子を有するＩＧＢＴ領域１１と、ＦＷＤ素子を有するＦＷＤ領域１２とが共通の半導体基板３０に形成されている半導体装置において、バリア領域３６および第１ベース層３２ａは、半導体基板３０の厚さ方向の所定位置にピーク濃度を有し、バリア領域３６のピーク濃度をｙ［×１．０×１０１６／ｃｍ３］とし、第１ベース層３２ａのピーク濃度をｘ［×１０×１０１７／ｃｍ３］とすると、ｙ≦１．０４２９ｘ２－２．４３７１ｘ＋１．４８を満たす構成となるようにする。【選択図】図５</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221208&DB=EPODOC&CC=JP&NR=2022181457A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221208&DB=EPODOC&CC=JP&NR=2022181457A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUMITOMO MASAKIYO</creatorcontrib><creatorcontrib>TAKAHASHI SHIGEKI</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor device capable of reducing leakage current while reducing switching loss.SOLUTION: The semiconductor device includes: an IGBT region 11 having an IGBT element; and an FWD region 12 having an FWD element, which are formed on a common semiconductor substrate 30. A barrier region 36 and a first base layer 32a has the peak concentration at a predetermined position of the semiconductor substrate 30 in the thickness direction. Defining the peak concentration of the barrier region 36 as y[×1.0×1016/cm3], and the peak concentration of the first base layer 32a as x[×10×1017/cm3], the semiconductor device has the configuration that satisfies y≤1.0429x2-2.4371x+1.48.SELECTED DRAWING: Figure 5
【課題】スイッチング損失を低減しつつ、リーク電流も低減できる半導体装置を提供する。【解決手段】ＩＧＢＴ素子を有するＩＧＢＴ領域１１と、ＦＷＤ素子を有するＦＷＤ領域１２とが共通の半導体基板３０に形成されている半導体装置において、バリア領域３６および第１ベース層３２ａは、半導体基板３０の厚さ方向の所定位置にピーク濃度を有し、バリア領域３６のピーク濃度をｙ［×１．０×１０１６／ｃｍ３］とし、第１ベース層３２ａのピーク濃度をｘ［×１０×１０１７／ｃｍ３］とすると、ｙ≦１．０４２９ｘ２－２．４３７１ｘ＋１．４８を満たす構成となるようにする。【選択図】図５</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRkaGFoYmpuaOxkQpAgC9YB8e</recordid><startdate>20221208</startdate><enddate>20221208</enddate><creator>SUMITOMO MASAKIYO</creator><creator>TAKAHASHI SHIGEKI</creator><scope>EVB</scope></search><sort><creationdate>20221208</creationdate><title>SEMICONDUCTOR DEVICE</title><author>SUMITOMO MASAKIYO ; TAKAHASHI SHIGEKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022181457A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUMITOMO MASAKIYO</creatorcontrib><creatorcontrib>TAKAHASHI SHIGEKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUMITOMO MASAKIYO</au><au>TAKAHASHI SHIGEKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2022-12-08</date><risdate>2022</risdate><abstract>To provide a semiconductor device capable of reducing leakage current while reducing switching loss.SOLUTION: The semiconductor device includes: an IGBT region 11 having an IGBT element; and an FWD region 12 having an FWD element, which are formed on a common semiconductor substrate 30. A barrier region 36 and a first base layer 32a has the peak concentration at a predetermined position of the semiconductor substrate 30 in the thickness direction. Defining the peak concentration of the barrier region 36 as y[×1.0×1016/cm3], and the peak concentration of the first base layer 32a as x[×10×1017/cm3], the semiconductor device has the configuration that satisfies y≤1.0429x2-2.4371x+1.48.SELECTED DRAWING: Figure 5
【課題】スイッチング損失を低減しつつ、リーク電流も低減できる半導体装置を提供する。【解決手段】ＩＧＢＴ素子を有するＩＧＢＴ領域１１と、ＦＷＤ素子を有するＦＷＤ領域１２とが共通の半導体基板３０に形成されている半導体装置において、バリア領域３６および第１ベース層３２ａは、半導体基板３０の厚さ方向の所定位置にピーク濃度を有し、バリア領域３６のピーク濃度をｙ［×１．０×１０１６／ｃｍ３］とし、第１ベース層３２ａのピーク濃度をｘ［×１０×１０１７／ｃｍ３］とすると、ｙ≦１．０４２９ｘ２－２．４３７１ｘ＋１．４８を満たす構成となるようにする。【選択図】図５</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
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