SEMICONDUCTOR DEVICE
To provide a semiconductor device capable of reducing leakage current while reducing switching loss.SOLUTION: The semiconductor device includes: an IGBT region 11 having an IGBT element; and an FWD region 12 having an FWD element, which are formed on a common semiconductor substrate 30. A barrier re...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | To provide a semiconductor device capable of reducing leakage current while reducing switching loss.SOLUTION: The semiconductor device includes: an IGBT region 11 having an IGBT element; and an FWD region 12 having an FWD element, which are formed on a common semiconductor substrate 30. A barrier region 36 and a first base layer 32a has the peak concentration at a predetermined position of the semiconductor substrate 30 in the thickness direction. Defining the peak concentration of the barrier region 36 as y[×1.0×1016/cm3], and the peak concentration of the first base layer 32a as x[×10×1017/cm3], the semiconductor device has the configuration that satisfies y≤1.0429x2-2.4371x+1.48.SELECTED DRAWING: Figure 5
【課題】スイッチング損失を低減しつつ、リーク電流も低減できる半導体装置を提供する。【解決手段】ＩＧＢＴ素子を有するＩＧＢＴ領域１１と、ＦＷＤ素子を有するＦＷＤ領域１２とが共通の半導体基板３０に形成されている半導体装置において、バリア領域３６および第１ベース層３２ａは、半導体基板３０の厚さ方向の所定位置にピーク濃度を有し、バリア領域３６のピーク濃度をｙ［×１．０×１０１６／ｃｍ３］とし、第１ベース層３２ａのピーク濃度をｘ［×１０×１０１７／ｃｍ３］とすると、ｙ≦１．０４２９ｘ２－２．４３７１ｘ＋１．４８を満たす構成となるようにする。【選択図】図５ |
|---|