ELASTIC WAVE DEVICE, FILTER, MULTIPLEXER, WAFER, AND METHOD OF MANUFACTURING WAFER
To provide an elastic wave device capable of improving the bonding strength between an interlayer and a piezoelectric substrate.SOLUTION: An elastic wave device comprises: a support substrate 10; a first interlayer 12 provided on the support substrate 10 and having average grain diameter of crystal...
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Zusammenfassung: | To provide an elastic wave device capable of improving the bonding strength between an interlayer and a piezoelectric substrate.SOLUTION: An elastic wave device comprises: a support substrate 10; a first interlayer 12 provided on the support substrate 10 and having average grain diameter of crystal grains of 100 nm or more; a second interlayer 13 provided on the first interlayer 12, where roughness of an interface 32 with the first interlayer 12 is smaller than that of an interface between the support substrate 10 and the first interlayer 12, the second interlayer being thinner than the first interlayer 12, and having average grain diameter of crystal grains of less than 100 nm; a piezoelectric substrate 14 directly bonded onto the second interlayer 13; and a pair of comb-shaped electrodes 20 provided on the piezoelectric substrate 14.SELECTED DRAWING: Figure 1
【課題】中間層と圧電基板と接合強度を向上させる弾性波デバイスを提供する。【解決手段】弾性波デバイスは、支持基板10と、支持基板10上に設けられ、結晶粒の平均粒径が100nm以上である第1中間層12と、第1中間層12上に設けられ、第1中間層12との界面32の粗さは支持基板10と第1中間層12との界面の粗さより小さく、第1中間層12より薄く、結晶粒の平均粒径が100nm未満である第2中間層13と、第2中間層13上に直接接合された圧電基板14と、圧電基板14上に設けられた一対の櫛型電極20とを備える。【選択図】図1 |
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