SEMICONDUCTOR DEVICE

To provide a semiconductor device which can stabilize a characteristic.SOLUTION: According to an embodiment, a semiconductor device contains a silicon carbide member. The silicon carbide member contains: an operation region including at least one of a diode and a transistor; and a first element regi...

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Bibliographische Detailangaben
Hauptverfasser: NISHIO JOJI, OTA CHIHARU
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a semiconductor device which can stabilize a characteristic.SOLUTION: According to an embodiment, a semiconductor device contains a silicon carbide member. The silicon carbide member contains: an operation region including at least one of a diode and a transistor; and a first element region including a first element. The first element region contains a first region and a second region. A first direction from the first region to the second region is along a [1-100] direction of the silicon carbide member. The operation region is between the first region and the second region in the first direction. The first element region does not include a region overlapped with the operation region in a second direction along a [11-20] direction of the silicon carbide member. Or, the first element region contains a third region overlapped with the operation region in the second direction. A first length along the first direction of the first region is longer than a third length along the second direction of the third region, and a second length along the first direction of the second region is longer than the third length.SELECTED DRAWING: Figure 1 【課題】特性を安定化できる半導体装置を提供する。【解決手段】実施形態によれば、半導体装置は、炭化珪素部材を含む。炭化珪素部材は、ダイオード及びトランジスタの少なくともいずれかを含む動作領域と、第1元素を含む第1元素領域と、を含む。第1元素領域は、第1領域及び第2領域を含む。第1領域から第2領域への第1方向は、炭化珪素部材の[1-100]方向に沿う。動作領域は第1方向において第1領域と第2領域との間にある。第1元素領域は、炭化珪素部材の[11-20]方向に沿う第2方向において動作領域と重なる領域を含まない。または、第1元素領域は、第2方向において動作領域と重なる第3領域を含み、第1領域の第1方向に沿う第1長さは、第3領域の第2方向に沿う第3長さよりも長く、第2領域の第1方向に沿う第2長さは、第3長さよりも長い。【選択図】図1