MANUFACTURING METHOD OF MATERIAL AND PHOTOCATALYST

To manufacture a new material.SOLUTION: In a plasma CVD apparatus having a chamber, a sputtering target that is arranged in the chamber and is composed of a predetermined element, and a plasma discharge part that discharges a plasma flow into the chamber, a manufacturing method of a material include...

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Bibliographische Detailangaben
1. Verfasser:	AKIKUBO KAZUMA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	To manufacture a new material.SOLUTION: In a plasma CVD apparatus having a chamber, a sputtering target that is arranged in the chamber and is composed of a predetermined element, and a plasma discharge part that discharges a plasma flow into the chamber, a manufacturing method of a material includes: a formation step S110 in which a reactive gas containing at least a carbon compound gas is supplied to the chamber, the plasma flow is discharged to the chamber, a carbon nano wall is formed on a substrate arranged in the chamber, and a predetermined element is doped in the carbon nano wall; and a sputtering step S120 in which after the doping step is implemented, a supply of the reactive gas to the chamber is stopped while the discharge of the plasma flow is maintained.SELECTED DRAWING: Figure 1 【課題】新規の材料を製造する。【解決手段】材料製造方法は、チャンバと、チャンバ内に設けられ、所定の元素で構成されるスパッタリングターゲットと、チャンバ内にプラズマ流を放出するプラズマ放出部とを有するプラズマＣＶＤ装置において、少なくとも炭素化合物のガスを含む反応ガスをチャンバ内に供給し、チャンバ内にプラズマ流を放出して、チャンバ内に設けられた基板上に、カーボンナノウォールを形成させつつ、カーボンナノウォールに所定の元素をドープする工程（形成工程Ｓ１１０）と、ドープする工程を実行した後、プラズマ流の放出を維持したまま、反応ガスのチャンバ内への供給を停止する工程（スパッタリング工程Ｓ１２０）と、を含む。【選択図】図１