CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD

SOLUTION: To provide a chemical mechanical polishing composition that includes modified silanized colloidal silica particles that are the reaction product of silanized colloidal silica particles with epoxy functional groups and nitrogen of an amine to form stable and tunable modified silanized collo...

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Bibliographische Detailangaben
Hauptverfasser:	DAVID WAYNE MOSLEY, CHI CHANGZAI, LI ZHANG, MATTHEW RICHARD VAN HANEHEM, KWADWO TETTEY, MURALI GANTH THEIVANAYAGAM
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	SOLUTION: To provide a chemical mechanical polishing composition that includes modified silanized colloidal silica particles that are the reaction product of silanized colloidal silica particles with epoxy functional groups and nitrogen of an amine to form stable and tunable modified silanized colloidal silica particles.EFFECT: Modified silanized colloidal silica particles can be used as abrasives in chemical mechanical polishing of various substrates, and polishes metals such as copper, Ta and TaN, and insulating materials such as TEOS and low-K films.SELECTED DRAWING: None 【解決手段】ケミカルメカニカルポリッシング組成物は、エポキシ官能基を有するシラン化コロイダルシリカ粒子とアミンの窒素との反応生成物である、修飾されたシラン化コロイダルシリカ粒子を含み、安定で調節可能な修飾されたシラン化コロイダルシリカ粒子を形成する。【効果】修飾されたシラン化コロイダルシリカ粒子は、様々な基材のケミカルメカニカルポリッシングにおける砥粒として用いることができ、銅、ＴａおよびＴａＮのような金属、ならびにＴＥＯＳおよびlow-Ｋフィルムのような絶縁材料を研磨する。【選択図】なし