METHOD FOR PRODUCING PURIFIED (ORGANOXYMETHYL)ORGANOXYSILANE

To provide a method for producing purified (organoxymethyl)organoxysilane in high purity and high yield, while suppressing disproportionation during distillation.SOLUTION: A method for producing a purified (organooxymethyl)organooxysilane comprises a step of distilling a (organooxymethyl)organooxysi...

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Hauptverfasser: HIGASHIMURA NAOKI, YASUDA SHIGENORI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a method for producing purified (organoxymethyl)organoxysilane in high purity and high yield, while suppressing disproportionation during distillation.SOLUTION: A method for producing a purified (organooxymethyl)organooxysilane comprises a step of distilling a (organooxymethyl)organooxysilane represented by the following general formula (1), (R1OCH2)mSi(OR2)nR34-m-n (1) (in the formula, R1, R2, and R3 are each independently an unsubstituted C1-10 primary hydrocarbon group; and m and n are integers of 1 to 3 and satisfy m+n≤4), in the presence of a metal organoxide at an internal temperature of a distillation still of less than 100°C and with a degree of pressure reduction adjusted so that the pressure becomes less than 9 kPa.SELECTED DRAWING: None 【課題】蒸留中の不均化を抑制し、高純度且つ高収率で精製(オルガノオキシメチル)オルガノオキシシランを製造する方法を提供すること。【解決手段】下記一般式(1)(R1OCH2)mSi(OR2)nR34-m-n(1)(式中、R1、R2およびR3は、それぞれ独立して、非置換の炭素数1~10の1価炭化水素基であり、mおよびnは、1~3の整数であり、m+n≦4を満たす。)で示される(オルガノオキシメチル)オルガノオキシシランを、金属オルガノオキシドの存在下、蒸留釜の内温が100℃未満であり、且つ圧力が9kPa未満となるように減圧度を調整して蒸留する工程を含む精製(オルガノオキシメチル)オルガノオキシシランの製造方法。【選択図】なし