LIQUID DISCHARGE HEAD SUBSTRATE AND RECORDING APPARATUS

To provide a technique that reduces breakage of an insulating layer due to ESD.SOLUTION: A liquid discharge head substrate includes: a substrate composition layer including a substrate and an intermediate layer including a wiring layer; an element generating energy to discharge liquid by supplying p...

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Bibliographische Detailangaben
Hauptverfasser: YASUDA KEN, ISHIDA YUZURU, IWAHASHI SHINYA
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a technique that reduces breakage of an insulating layer due to ESD.SOLUTION: A liquid discharge head substrate includes: a substrate composition layer including a substrate and an intermediate layer including a wiring layer; an element generating energy to discharge liquid by supplying power from the wiring layer; an insulating layer covering the element and the substrate composition layer against a liquid chamber having a liquid outlet; and a conductive layer formed on the insulating layer to cover the element against the liquid chamber. The liquid discharge head substrate is provided with: an electric connection part formed at a position where the wiring layer and the element overlap and electrically connecting the wiring layer and the element; a non-insulating part formed on a side of the intermediate layer of the substrate composition layer and covered by the insulating layer against the liquid chamber; and an opening formed in the insulating layer at a position separated from the element and overlapping the conductive layer and the non-insulating part. The non-insulated part is connected to the conductive layer via the opening.SELECTED DRAWING: Figure 4 【課題】ESDによる絶縁層の破壊を低減する技術を提供すること。【解決手段】基材と配線層を含む中間層とを含む基板構成層と、前記配線層からの電力の供給により、液体を吐出させるエネルギを発生する素子と、前記液体の吐出口を有する液室に対して前記素子と前記基板構成層とを被覆する絶縁層と、前記液室に対して前記素子を覆うように前記絶縁層上に形成された導電層と、を備えた液体吐出ヘッド用基板であって、前記配線層と前記素子とが重なる位置に形成され、前記配線層と前記素子とを電気接続する電気接続部と、前記基板構成層の前記中間層の側に形成され、前記液室に対して前記絶縁層に被覆された非絶縁部と、前記素子から離間し、かつ、前記導電層及び前記非絶縁部と重なる位置において、前記絶縁層に形成された開口部と、を備え、前記非絶縁部は、前記開口部を介して前記導電層と接続されている。【選択図】図4