TUNGSTEN OXIDE SPUTTERING TARGET

To provide a tungsten oxide sputtering target capable of suppressing the occurrence of abnormal discharge even when performing DC sputtering on high electric power conditions and stably depositing a tungsten oxide film excellent in alkali resistance by sputtering.SOLUTION: An additional metal oxide...

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Bibliographische Detailangaben
Hauptverfasser:	SUGIUCHI YUKIYA, OKANO SUSUMU, OTOMO KENJI, CHEN SHUZHI, UMEMOTO KEITA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To provide a tungsten oxide sputtering target capable of suppressing the occurrence of abnormal discharge even when performing DC sputtering on high electric power conditions and stably depositing a tungsten oxide film excellent in alkali resistance by sputtering.SOLUTION: An additional metal oxide phase 12 consisting of an additional metal oxide selected from a kind or two kinds or more selected from Nb, Ta, Ti, Si and Ga exists in a tungsten oxide phase 11 used as a base phase, and the average particle size of the additional metal oxide phase 12 is 50 μm or less.SELECTED DRAWING: Figure 1 【課題】高電力条件でＤＣスパッタを実施した場合であっても、異常放電の発生を抑制でき、アルカリ耐性に優れた酸化タングステン膜を安定してスパッタ成膜することが可能な酸化タングステンスパッタリングターゲットを提供する。【解決手段】母相となる酸化タングステン相１１に、Ｎｂ，Ｔａ，Ｔｉ，Ｓｉ，Ｇａから選択される一種または二種以上から選択される添加金属の酸化物からなる添加金属酸化物相１２が存在し、添加金属酸化物相１２の平均粒径が５０μｍ以下であることを特徴とする。【選択図】図１