COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING COMPOSITE STRUCTURE

To provide a composite structure used as a member of a semiconductor manufacturing apparatus, and the semiconductor apparatus including the same, the semiconductor manufacturing apparatus being capable of enhancing a low-particle generation.SOLUTION: A composite structure includes a base material an...

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Bibliographische Detailangaben
Hauptverfasser:	ASHIZAWA HIROAKI, TAKIZAWA AKIHITO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a composite structure used as a member of a semiconductor manufacturing apparatus, and the semiconductor apparatus including the same, the semiconductor manufacturing apparatus being capable of enhancing a low-particle generation.SOLUTION: A composite structure includes a base material and a structure that is arranged on the base material and has a surface. The structure includes Y4Al2O9 as a main component and has a nano-indentation hardness of 6.0 GPa or more. The composite structure has an excellent particle resistance, and is preferably used as a member of a semiconductor manufacturing apparatus.SELECTED DRAWING: Figure 4 【課題】耐パーティクル性(low-particle generation)を高めることができる、半導体製造装置用部材として用いられる複合構造物およびそれを備えた半導体製造装置を提供することを目的とする。【解決手段】基材と、前記基材上に設けられ、表面を有する構造物とを含む複合構造物であって、前記構造物がＹ４Ａｌ２Ｏ９を主成分として含み、かつそのインデンテーション硬度が６．０ＧＰａより大である複合構造物は、耐パーティクル性に優れ、半導体製造装置用部材として好ましく用いられる。【選択図】図４