COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT HAVING COMPOSITE STRUCTURE

To provide semiconductor manufacturing equipment components and semiconductor manufacturing equipment capable of improving low-particle generation.SOLUTION: A composite structure 10 has a base material 15 and a structure 20 having a surface on the base material 15 that is exposed to a plasma atmosph...

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Bibliographische Detailangaben
Hauptverfasser:	ASHIZAWA HIROAKI, TAKIZAWA AKIHITO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To provide semiconductor manufacturing equipment components and semiconductor manufacturing equipment capable of improving low-particle generation.SOLUTION: A composite structure 10 has a base material 15 and a structure 20 having a surface on the base material 15 that is exposed to a plasma atmosphere. The structure contains Y4Al2O9 as a major component and the lattice constant and/or the intensity ratio of certain peaks in the X-ray diffraction meet certain conditions.SELECTED DRAWING: Figure 1 【課題】耐パーティクル性(low-particle generation)を高めることができる半導体製造装置用部材および半導体製造装置を提供する。【解決手段】複合構造物１０は、基材１５と、基材１５上に設けられ、プラズマ雰囲気に曝露される表面を有する構造物２０とを備える。構造物がＹ４Ａｌ２Ｏ９を主成分として含み、かつ、格子定数および/またはＸ線回析の特定のピークの強度比が特定の条件を満たす。【選択図】図１