SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device capable of achieving higher integration.SOLUTION: A semiconductor storage device comprises: a first conductive layer extending in a first direction; a second conductive layer extending in the first direction and juxtaposed with the first conductive layer in a second direction; a first insulation layer provided between the first conductive layer and the second conductive layer; a semiconductor layer extending in the second direction and facing the first conductive layer, the second conductive layer, and the first insulation layer in a third direction; a first charge storage layer provided between the first conductive layer and the semiconductor layer; a second charge storage layer provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a part of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer in the second direction.SELECTED DRAWING: Figure 6 【課題】高集積化が可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、第１方向に延伸する第１導電層と、第１方向に延伸し第２方向において第１導電層と並ぶ第２導電層と、第１導電層と第２導電層との間に設けられた第１絶縁層と、第２方向に延伸し、第３方向において第１導電層、第２導電層、及び第１絶縁層と対向する半導体層と、第１導電層と半導体層との間に設けられた第１電荷蓄積層と、第２導電層と半導体層との間に設けられた第２電荷蓄積層と、第１導電層と第１電荷蓄積層との間に設けられた第１高誘電率層と、第２導電層と第２電荷蓄積層との間に設けられた第２高誘電率層とを備える。第１電荷蓄積層の少なくとも一部は、第２方向において第２高誘電率層を介さずに第２電荷蓄積層と対向する。【選択図】図６