Ga2O3 BASED SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING Ga2O3 BASED SINGLE CRYSTAL SUBSTRATE

To manufacture a Ga2O3 based single crystal and Ga2O3 based single crystal substrate without completely including twins and as a result, manufacture an optical device or an electric power device at a high yield using the Ga2O3 based single crystal substrate.SOLUTION: A single crystal without completely including twins is grown using a gallium oxide raw material having an impurity concentration controlled so that an impurity concentration included in the single crystal is 0.02 mol% or more and 0.15 mol% or less, and a Ga2O3 based single crystal substrate without completely having twins is manufactured from the single crystal.SELECTED DRAWING: Figure 1 【課題】完全に双晶のない、Ga2O3系単結晶及びGa2O3系単結晶基板を作製できるようにし、ひいてはGa2O3系単結晶基板を用いた光デバイスや電力用デバイスを歩留まりよく生産できるようにする。【解決手段】単結晶中に含有される不純物濃度が０．０２mol%以上０．１５mol%以下になるように不純物濃度が調整された酸化ガリウム原料を用いて、完全に双晶のない単結晶を育成し、その単結晶から完全に双晶のないGa2O3系単結晶基板を作製する。【選択図】図１