SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
To provide technology that processes a substrate with a processing fluid in a supercritical state in a chamber, and can obtain stable processing efficiency especially when processing a plurality of substrates in order by appropriately controlling the temperature in the chamber after processing.SOLUT...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide technology that processes a substrate with a processing fluid in a supercritical state in a chamber, and can obtain stable processing efficiency especially when processing a plurality of substrates in order by appropriately controlling the temperature in the chamber after processing.SOLUTION: A substrate processing method according to the present invention includes a supercritical processing step of introducing a processing fluid into an internal space of a chamber storing a substrate and processing the substrate with the processing fluid in a supercritical state, a decompression step of discharging the processing fluid and decompressing the internal space, an unloading step of unloading the substrate from the chamber, and a temperature adjustment step of adjusting the temperature of the internal space to a target temperature by introducing and discharging the processing fluid into the internal space after the substrate is unloaded.SELECTED DRAWING: Figure 2
【課題】チャンバ内で超臨界状態の処理流体により基板を処理する技術において、処理後のチャンバ内の温度を適切に管理して、特に複数の基板を順番に処理する場合にも安定した処理効率を得ることのできる技術を提供する。【解決手段】本発明に係る基板処理方法は、基板を収容したチャンバの内部空間に処理流体を導入し、超臨界状態の処理流体により基板を処理する超臨界処理工程と、処理流体を排出し内部空間を減圧する減圧工程と、基板をチャンバから搬出する搬出工程と、基板が搬出された後の内部空間に処理流体を導入して排出することにより、内部空間の温度を目標温度に調整する温度調整工程とを備える。【選択図】図2 |
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