SEMICONDUCTOR DEVICE, MEMORY SYSTEM, AND SEMICONDUCTOR STORAGE DEVICE
To provide a semiconductor device in which the influence of read disturb can be found early.SOLUTION: A semiconductor device according to an embodiment includes a transmission/reception circuit and a control circuit. The transmission/reception circuit transmits and receives signals to and from a sem...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a semiconductor device in which the influence of read disturb can be found early.SOLUTION: A semiconductor device according to an embodiment includes a transmission/reception circuit and a control circuit. The transmission/reception circuit transmits and receives signals to and from a semiconductor storage device. The control circuit acquires threshold distribution information of a storage element connected to a word line for read disturb detection to which second voltage, which is higher than first voltage to be applied to an adjacent word line that is adjacent to a word line to be read out in a readout operation, is applied, and determines the influence of read disturb on the basis of the threshold distribution information.SELECTED DRAWING: Figure 3
【課題】リードディスターブの影響を早期に発見することができる半導体装置を提供する。【解決手段】本実施形態の半導体装置は、送受信回路と、制御回路とを有する。送受信回路は、半導体記憶装置と信号の送受信を行う。制御回路は、読み出し動作時に読み出し対象のワード線に隣接する隣接ワード線に印加する第１の電圧よりも高い第２の電圧が印加されるリードディスターブ検出用のワード線に接続された記憶素子の閾値分布情報を取得し、閾値分布情報に基づきリードディスターブの影響を判定する。【選択図】図３ |
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