CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER USING THE SAME

To provide a CMP slurry composition for polishing a tungsten pattern wafer, that can reduce a corrosion rate while improving surface smoothness of the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer includes a solvent, abrasive, and dendritic poly(ami...

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Bibliographische Detailangaben
Hauptverfasser:	SIM SOO YEON, LEE HYUN WOO, LEE JONG-WON, LEE JI HO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a CMP slurry composition for polishing a tungsten pattern wafer, that can reduce a corrosion rate while improving surface smoothness of the tungsten pattern wafer.SOLUTION: A CMP slurry composition for polishing a tungsten pattern wafer includes a solvent, abrasive, and dendritic poly(amidoamine) with an amino group at a terminal thereof.SELECTED DRAWING: None 【課題】タングステンパターンウェハーの平坦性を改善しながら、腐食速度を低下させることができるタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を提供する。【解決手段】溶媒；研磨剤；及び末端にアミノ基を有する樹枝状ポリ（アミドアミン）；を含んでタングステンパターンウェハー研磨用ＣＭＰスラリー組成物を構成する。【選択図】なし