PLASMA PROCESSING DEVICE AND METHOD OF CONTROLLING PLASMA PROCESSING DEVICE

To provide a technique for suppressing an increase in etching rate due to plasma processing even when the degree of wear of an edge ring increases.SOLUTION: A plasma processing device includes a high-frequency power supply that supplies high-frequency power, a direct-current power supply that individually applies a DC voltage to each of a plurality of direct-current electrodes provided in a chamber, an edge ring, and a control unit. First electrodes of the plurality of direct-current electrodes are provided in a member provided in the chamber and different from the edge ring, second electrodes of the plurality of direct-current electrodes are provided on the edge ring. The control unit performs control such that the start of supply of high-frequency power to the high-frequency electrode is simultaneous with or before the start of application of the DC voltage to the first electrode, and the start of application of the DC voltage to the first electrode is simultaneous with or before the start of application of the DC voltage to the second electrode.SELECTED DRAWING: Figure 1 【課題】エッジリングの消耗の程度が増加した場合においてもプラズマ処理によるエッチングレートの上昇を抑制する技術を提供する。【解決手段】一つの例示的実施形態に係るプラズマ処理装置は、高周波電力を供給する高周波電源装置と、チャンバ内に設けられた複数の直流電極のそれぞれに直流電圧を個別に印加する直流電源装置と、エッジリングと、制御部とを備え、複数の直流電極の第１の電極はチャンバ内に設けられた部材であってエッジリングとは異なる部材に設けられ、複数の直流電極の第２の電極はエッジリングに設けられ、制御部は、高周波電極への高周波電力の供給の開始が第１の電極への直流電圧の印加の開始と同時又は前となり、第１の電極への直流電圧の印加の開始が第２の電極への直流電圧の印加の開始と同時又は前となるように制御する。【選択図】図１