SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

To provide a technique which enables more uniform processing of a substrate while enhancing throughput of the processing.SOLUTION: A substrate processing method comprises a holding step S1, a plasma source arrangement step, an atmosphere replacement step S2, an interval reduction step S4, and a plasma processing step S5. In the holding step S1, a substrate holding part holds a substrate. In a liquid supply step, a process liquid is supplied to a main surface of the substrate. In the plasma source arrangement step, an interval between a plasma source and the substrate is set at a first interval. In the atmosphere replacement step S2, gas is supplied to a space between the main surface of the substrate and the plasma source at a first flow rate. In the interval reduction step S4, the interval between the plasma source and the substrate is reduced to a second interval. In the plasma processing step S5, under a state where the interval is set at the second interval and the plasma source is turned on, the gas is supplied to a space between the main surface of the substrate and the plasma source at a second flow rate lower than the first flow rate, or the supply of the gas is stopped.SELECTED DRAWING: Figure 5 【課題】処理のスループットを高めつつも、基板に対してより均一に処理を行うことができる技術を提供する。【解決手段】基板処理方法は保持工程Ｓ１とプラズマ源配置工程と雰囲気置換工程Ｓ２と間隔低減工程Ｓ４とプラズマ処理工程Ｓ５とを含む。保持工程Ｓ１では、基板保持部が基板を保持する。液供給工程では、基板の主面に処理液を供給する。プラズマ源配置工程では、プラズマ源と基板と間隔が第１間隔となる。雰囲気置換工程Ｓ２では、基板の主面とプラズマ源との間に第１流量でガスを供給する。間隔低減工程Ｓ４では、プラズマ源と基板との間隔を第２間隔まで低減させる。プラズマ処理工程Ｓ５では、当該間隔が第２間隔となり、かつ、プラズマ源が点灯した状態において、基板の主面とプラズマ源との間の空間に第１流量よりも小さい第２流量でガスを供給する、もしくは、ガスの供給を停止する。【選択図】図５