PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME

To provide a photoelectric conversion element capable of improving the characteristics thereof, and a method for manufacturing the same.SOLUTION: According to one embodiment, a photoelectric conversion element includes: a first conductive layer; a second conductive layer; and a photoelectric conversion layer located between the first conductive layer and the second conductive layer, the photoelectric conversion layer including Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region has a first Sn concentration and a first Pb concentration. The second partial region has at least one of a second Sn concentration less than the first Sn concentration or a second Pb concentration greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.SELECTED DRAWING: Figure 1 【課題】特性を向上可能な光電変換素子及びその製造方法を提供する。【解決手段】実施形態によれば、光電変換素子は、第１導電層と、第２導電層と、前記第１導電層と前記第２導電層との間に設けられ、Ｓｎ及びＰｂを含む光電変換層と、を含む。前記光電変換層は、第１部分領域と、前記第１部分領域と前記第２導電層との間の第２部分領域と、前記第２部分領域と前記第２導電層との間の第３部分領域と、を含む。前記第１部分領域は、第１Ｓｎ濃度及び第１Ｐｂ濃度を有する。前記第２部分領域は、前記第１Ｓｎ濃度よりも低い第２Ｓｎ濃度、及び、前記第１Ｐｂ濃度よりも高い第２Ｐｂ濃度の少なくともいずれかを有する。前記第３部分領域は、Ｓｎ、酸素及びＰｂを含む。【選択図】図１