SEMICONDUCTOR MEMORY DEVICE

To provide a semiconductor memory device that can be easily highly integrated.SOLUTION: A semiconductor memory device has a substrate, a plurality of conductive layers aligned in the first direction and extending in the second direction, a semiconductor layer extending in the first direction and facing the plurality of conductive layers, and n contact electrode regions aligned in the third direction, where n is a power of 2. The contact electrode region has a plurality of contact electrodes aligned in the second direction. The plurality of conductive layers includes a first conductive layer and a second conductive layer that is the nth conductive layer counting from the first conductive layer. The plurality of contact electrodes includes a first contact electrode connected to the first conductive layer, a second contact electrode connected to the second conductive layer, and a third contact electrode provided between the first and second contact electrodes. The first contact electrode, the second contact electrode, and the third contact electrode are aligned in the second or third direction.SELECTED DRAWING: Figure 6 【課題】高集積化の容易な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、基板と、第１方向に並び第２方向に延伸する複数の導電層と、第１方向に延伸し複数の導電層と対向する半導体層と、第３方向に並ぶｎ個のコンタクト電極領域と、を備える。ｎは２のべき乗である。コンタクト電極領域は、第２方向に並ぶ複数のコンタクト電極を備える。複数の導電層は、第１導電層と、第１導電層から数えてｎ番目の導電層である第２導電層と、を含む。複数のコンタクト電極は、第１導電層に接続された第１コンタクト電極と、第２導電層に接続された第２コンタクト電極と、第１コンタクト電極及び第２コンタクト電極の間に設けられた第３コンタクト電極と、を含む。第１コンタクト電極、第２コンタクト電極及び第３コンタクト電極は、第２方向又は第３方向において並ぶ。【選択図】図６