SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

To provide a semiconductor device capable of preferably forming a semiconductor layer in an open part.SOLUTION: A semiconductor device comprises: a first lamination film containing a plurality of first electrode layers separated from each other; an insulation layer provided onto the first lamination film; and a second lamination film provided on the insulation layer and containing a plurality of second electrode layers separated from each other. The device further comprises a column-like part that includes: a first insulation film provided in order of the first lamination film, the insulation layer, and the second lamination film; a charge storage layer; a second insulation film; and a semiconductor layer, and extends along a first direction directed to the second lamination film from the first lamination film. In addition, the column-like part in the insulation layer includes: a first part having a first width in a second direction crossing the first direction; and a second part provided at a position higher than that of the first part, and having, in the second direction, a second width larger than the first width and larger than the width in the second direction of the column-like part in the second lamination film.SELECTED DRAWING: Figure 2 【課題】開口部内に半導体層を好適に形成することが可能な半導体装置を提供する。【解決手段】一の実施形態によれば、半導体装置は、互いに離隔された複数の第１電極層を含む第１積層膜と、前記第１積層膜上に設けられた絶縁層と、前記絶縁層上に設けられ、互いに離隔された複数の第２電極層を含む第２積層膜とを備える。前記装置はさらに、前記第１積層膜、前記絶縁層、および前記第２積層膜内に順に設けられた第１絶縁膜、電荷蓄積層、第２絶縁膜、および半導体層を含み、前記第１積層膜から前記第２積層膜に向かう第１方向に沿って延びる柱状部を備える。さらに、前記絶縁層内の前記柱状部は、前記第１方向と交差する第２方向に第１幅を有する第１部分と、前記第１部分よりも高い位置に設けられ、前記第１幅より大きくかつ前記第２積層膜内の前記柱状部の前記第２方向における幅より大きい第２幅を前記第２方向において有する第２部分とを含む。【選択図】図２