METHOD FOR MANUFACTURING VAPOR DEPOSITION SOURCE

To provide a method for manufacturing a vapor deposition source, capable of densely forming a lot of discharge parts on a surface facing a substrate to be processed to each other.SOLUTION: A method for manufacturing a vapor deposition source EV comprises: a step of forming a plurality of discharge p...

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Hauptverfasser: UMEHARA SEIJI, ZHANG WEISI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a method for manufacturing a vapor deposition source, capable of densely forming a lot of discharge parts on a surface facing a substrate to be processed to each other.SOLUTION: A method for manufacturing a vapor deposition source EV comprises: a step of forming a plurality of discharge parts allowing the passage of the vapor deposition material evaporated or sublimated by heating a storage box Sb for charging a vapor deposition material Em with a predetermined pattern in the lid plate part 12 of the storage box; a first step of providing a mask 2 using each discharge part formed with the predetermined pattern as an etching range and restricting the etching range in the lid plate part of the storage box; and a second step of etching the etching range of the storage box through the mask to form a plurality of through-holes 14 reaching a space in the storage box.SELECTED DRAWING: Figure 2 【課題】被処理基板に対向する面に多数の放出部を互いに密集させて形成することができる蒸着源の製造方法を提供する。【解決手段】蒸着物質Emを充填する収容箱Sbの蓋板部12に、この収容箱の加熱により気化または昇華した蒸着物質の通過を許容する複数個の放出部を所定のパターンで形成する工程を含む本発明の蒸着源EVの製造方法は、所定のパターンで形成される各放出部をエッチング範囲とし、収容箱の蓋板部に、エッチング範囲を制限するマスク2を設ける第1工程と、収容箱のエッチング範囲をマスク越しにエッチングして収容箱内の空間に達する複数個の透孔14を形成する第2工程とを更に含む。【選択図】図2