SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

To provide a substrate processing method and a substrate processing device which enable the increase in etching resistance and suppression of film stress.SOLUTION: A substrate processing method for forming a carbon-based film on a substrate comprises: a step of putting the substrate on a work-holder table; a first film formation step of forming a first carbon-based film having a first stress; a second film formation step of forming a second carbon-based film having a second stress; and a third film formation step of repeating the first and second film formation steps to form a laminate of the first and second carbon-based films. In the method, the first stress and the second stress are identical to each other in direction, and the first stress and the second stress are different from each other in strength.SELECTED DRAWING: Figure 3 【課題】エッチング耐性を向上し、膜応力を抑制する基板処理方法及び基板処理装置を提供する。【解決手段】基板にカーボン系膜を形成する基板処理方法であって、前記基板を載置台に載置する工程と、第１の応力を有する第１のカーボン系膜を形成する第１成膜工程と、第２の応力を有する第２のカーボン系膜を形成する第２成膜工程と、前記第１成膜工程と前記第２成膜工程とを繰り返して、前記第１のカーボン系膜及び前記第２のカーボン系膜の積層体を形成する第３成膜工程と、を有し、前記第１の応力と前記第２の応力とは同じ向きであり、かつ、前記第１の応力と前記第２の応力とは強さが異なる、基板処理方法。【選択図】図３