ETCHING METHOD AND ETCHING APPARATUS
To selectively etch a desired film from among a plurality of types of films formed on the surface of a substrate.SOLUTION: An etching method includes the steps of: supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate having...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | To selectively etch a desired film from among a plurality of types of films formed on the surface of a substrate.SOLUTION: An etching method includes the steps of: supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate having a surface on which a first film and a second film are formed, each of the first and second films having a property of being etched by an etching gas, and forming a protective film covering the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed.SELECTED DRAWING: Figure 3A
【課題】基板の表面に形成された複数種類の膜のうち、所望の膜を選択的にエッチングすること【解決手段】エッチングガスに対して各々被エッチング性を有する第１の膜及び第２の膜が表面に形成された基板に、水酸基を備えた化合物、あるいは水の少なくとも一方を含む保護膜形成用ガスを供給し、前記エッチングガスを供給するときに前記第１の膜及び前記第２の膜のうち、前記第１の膜が選択的に保護されるように当該第１の膜を被覆する保護膜を形成する工程と、前記保護膜が形成された状態で、前記基板にエッチングガスを供給して前記第２の膜を選択的にエッチングする工程と、を備える。【選択図】図３Ａ |
|---|