PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM

To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance, while suppressing evaporation of a Li component.SOLUTION: In a production method of a p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thi...

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1. Verfasser:	KAWATARI MIKIHISA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance, while suppressing evaporation of a Li component.SOLUTION: In a production method of a p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thin film (as-grown thin film) is deposited by a vapor phase epitaxial method, and the obtained polycrystalline p-type NiO thin film (as-grown thin film) is annealed, an annealing temperature is set in a specific range. To put it concretely, annealing is carried out at a temperature of 600-800°C.SELECTED DRAWING: Figure 1 【課題】Ｌｉ成分の蒸発を抑制しつつ、低抵抗のＬｉドープｐ型ＮｉＯ薄膜を得ることのできるＬｉドープｐ型ＮｉＯ薄膜の製造方法を提供する。【解決手段】気相成長法によりＬｉがドープされた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）を成膜し、得られた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）をアニールする、ｐ型ＮｉＯ薄膜の製造方法において、アニール温度を特定の範囲とする。具体的には、アニールを６００～８００℃の温度で実施する。【選択図】図１