PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM
To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance.SOLUTION: In a production method of a Li-doped p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thin film (as-grown thin film) is deposited...
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| description | To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance.SOLUTION: In a production method of a Li-doped p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thin film (as-grown thin film) is deposited by a vapor phase epitaxial method, and the obtained polycrystalline p-type NiO thin film (as-grown thin film) is annealed, a film-forming temperature of the polycrystalline p-type NiO thin film (as-grown thin film), and an annealing temperature thereafter are set in a specific range respectively. To put it concretely, deposition is carried out at 100°C or lower, and annealing is carried out at a temperature of 100-300°C.SELECTED DRAWING: Figure 1
【課題】低抵抗のＬｉドープｐ型ＮｉＯ薄膜を得ることのできるＬｉドープｐ型ＮｉＯ薄膜の製造方法を提供する。【解決手段】気相成長法によりＬｉがドープされた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）を成膜し、得られた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）をアニールする、Ｌｉドープｐ型ＮｉＯ薄膜の製造方法において、多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）の成膜温度と、その後のアニール温度とを、特定の範囲とする。具体的には、成膜を１００℃以下の温度で実施し、アニールを１００～３００℃の温度で実施する。【選択図】図１ |
| format | Patent |
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【課題】低抵抗のＬｉドープｐ型ＮｉＯ薄膜を得ることのできるＬｉドープｐ型ＮｉＯ薄膜の製造方法を提供する。【解決手段】気相成長法によりＬｉがドープされた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）を成膜し、得られた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）をアニールする、Ｌｉドープｐ型ＮｉＯ薄膜の製造方法において、多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）の成膜温度と、その後のアニール温度とを、特定の範囲とする。具体的には、成膜を１００℃以下の温度で実施し、アニールを１００～３００℃の温度で実施する。【選択図】図１</description><language>eng ; jpn</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220815&DB=EPODOC&CC=JP&NR=2022118459A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220815&DB=EPODOC&CC=JP&NR=2022118459A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWATARI MIKIHISA</creatorcontrib><title>PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM</title><description>To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance.SOLUTION: In a production method of a Li-doped p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thin film (as-grown thin film) is deposited by a vapor phase epitaxial method, and the obtained polycrystalline p-type NiO thin film (as-grown thin film) is annealed, a film-forming temperature of the polycrystalline p-type NiO thin film (as-grown thin film), and an annealing temperature thereafter are set in a specific range respectively. To put it concretely, deposition is carried out at 100°C or lower, and annealing is carried out at a temperature of 100-300°C.SELECTED DRAWING: Figure 1
【課題】低抵抗のＬｉドープｐ型ＮｉＯ薄膜を得ることのできるＬｉドープｐ型ＮｉＯ薄膜の製造方法を提供する。【解決手段】気相成長法によりＬｉがドープされた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）を成膜し、得られた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）をアニールする、Ｌｉドープｐ型ＮｉＯ薄膜の製造方法において、多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）の成膜温度と、その後のアニール温度とを、特定の範囲とする。具体的には、成膜を１００℃以下の温度で実施し、アニールを１００～３００℃の温度で実施する。【選択図】図１</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAKCPJ3CXUO8fT3U_B1DfHwd1Hwd1PwydR18Q9wdVEo0A2JDHBV8Mv0Vwjx8PRTcPP08eVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRkaGhhYmppaOxkQpAgDSjCdc</recordid><startdate>20220815</startdate><enddate>20220815</enddate><creator>KAWATARI MIKIHISA</creator><scope>EVB</scope></search><sort><creationdate>20220815</creationdate><title>PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM</title><author>KAWATARI MIKIHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2022118459A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2022</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWATARI MIKIHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWATARI MIKIHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM</title><date>2022-08-15</date><risdate>2022</risdate><abstract>To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance.SOLUTION: In a production method of a Li-doped p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thin film (as-grown thin film) is deposited by a vapor phase epitaxial method, and the obtained polycrystalline p-type NiO thin film (as-grown thin film) is annealed, a film-forming temperature of the polycrystalline p-type NiO thin film (as-grown thin film), and an annealing temperature thereafter are set in a specific range respectively. To put it concretely, deposition is carried out at 100°C or lower, and annealing is carried out at a temperature of 100-300°C.SELECTED DRAWING: Figure 1
【課題】低抵抗のＬｉドープｐ型ＮｉＯ薄膜を得ることのできるＬｉドープｐ型ＮｉＯ薄膜の製造方法を提供する。【解決手段】気相成長法によりＬｉがドープされた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）を成膜し、得られた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）をアニールする、Ｌｉドープｐ型ＮｉＯ薄膜の製造方法において、多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）の成膜温度と、その後のアニール温度とを、特定の範囲とする。具体的には、成膜を１００℃以下の温度で実施し、アニールを１００～３００℃の温度で実施する。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM |
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