PRODUCTION METHOD OF Li-DOPED p-TYPE NiO THIN FILM

To provide a production method of a Li-doped p-type NiO thin film capable of obtaining a Li-doped p-type NiO thin film having low resistance.SOLUTION: In a production method of a Li-doped p-type NiO thin film, in which a LI-doped polycrystalline p-type NiO thin film (as-grown thin film) is deposited by a vapor phase epitaxial method, and the obtained polycrystalline p-type NiO thin film (as-grown thin film) is annealed, a film-forming temperature of the polycrystalline p-type NiO thin film (as-grown thin film), and an annealing temperature thereafter are set in a specific range respectively. To put it concretely, deposition is carried out at 100°C or lower, and annealing is carried out at a temperature of 100-300°C.SELECTED DRAWING: Figure 1 【課題】低抵抗のＬｉドープｐ型ＮｉＯ薄膜を得ることのできるＬｉドープｐ型ＮｉＯ薄膜の製造方法を提供する。【解決手段】気相成長法によりＬｉがドープされた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）を成膜し、得られた多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）をアニールする、Ｌｉドープｐ型ＮｉＯ薄膜の製造方法において、多結晶ｐ型ＮｉＯ薄膜（ａｓ－ｇｒｏｗｎ薄膜）の成膜温度と、その後のアニール温度とを、特定の範囲とする。具体的には、成膜を１００℃以下の温度で実施し、アニールを１００～３００℃の温度で実施する。【選択図】図１